STM8S003K3U6CTR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S003K3U6CTR

Value line, 16-MHz STM8S 8-bit MCU, 8-Kbyte Flash memory, 128-byte data EEPROM, 10-bit ADC, 3 timers, UART, SPI, I²C

STMicroelectronics 

STM8S003F3 STM8S003K3

Electrical characteristics

HSE oscillator critical gm formula

gmcrit = (2 × Π × fHSE)2 × Rm(2Co + C)2

Rm: Notional resistance (see crystal specification)

Lm: Notional inductance (see crystal specification)

Cm: Notional capacitance (see crystal specification)

Co: Shunt capacitance (see crystal specification)

CL1=CL2=C: Grounded external capacitance

gm >> gmcrit

9.3.4

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA.

High speed internal RC oscillator (HSI)

Symbol

Table 34. HSI oscillator characteristics

Parameter

Conditions

Min

fHSI Frequency

-

-

User-trimmed with the

ACCHSI

Accuracy of HSI oscillator

CLK_HSITRIMR register

cfoorngdiivtieonnsV(1D)D and TA

-

Accuracy of HSI oscillator VDD = 5 V,

(factory calibrated)

-40 °C ≤ TA ≤ 85 °C

-5

tsu(HSI)

HSI oscillator wakeup

time including calibration

-

-

IDD(HSI)

HSI oscillator power

consumption

-

-

1. See the application note.

2. Guaranteed by design.

3. Data based on characterization results.

Typ Max Unit

16

-

MHz

-

1.0(2)

%

-

5

-

1.0(2)

µs

170 250(3) µA

DS7147 Rev 10

63/103

87

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