STM8S003K3U6CTR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S003K3U6CTR

Value line, 16-MHz STM8S 8-bit MCU, 8-Kbyte Flash memory, 128-byte data EEPROM, 10-bit ADC, 3 timers, UART, SPI, I²C

STMicroelectronics 

STM8S003F3 STM8S003K3

Electrical characteristics

9.3.5

Memory characteristics

RAM and hardware registers

Table 36. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Unit

VRM

Data retention mode(1)

Halt mode (or reset)

VIT-max(2)

V

1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware

registers (only in halt mode). Guaranteed by design.

2. Refer to Table 20 on page 50 for the value of VIT-max.

Flash program memory and data EEPROM

General conditions: TA = -40 to 85 °C.

Symbol

Table 37. Flash program memory and data EEPROM

Parameter

Conditions

Min(1) Typ Max Unit

VDD

Operating voltage

(all modes, execution/write/erase)

fCPU ≤ 16 MHz

2.95 -

5.5

Standard programming time (including

erase) for byte/word/block

-

tprog (1 byte/4 bytes/64 bytes)

Fast programming time for 1 block (64

bytes)

-

- 6.0 6.6

- 3.0 3.3

terase

NRW

Erase time for 1 block (64 bytes)

Erase/write cycles(2)

(program memory)

Erase/write cycles(2)

(data memory)

-

TA = 85 °C

- 3.0 3.3

100 -

-

100 k -

-

Data retention (program memory)

after 100 erase/write cycles at

TA = 85 °C

tRET Data retention (data memory) after

10 k erase/write cycles at TA = 85 °C

Data retention (data memory) after

100 k erase/write cycles at TA = 85 °C

IDD

Supply current (Flash programming or

erasing for 1 to 128 bytes)

TRET = 55° C

TRET = 85° C

-

20 -

-

20 -

-

1.0 -

-

- 2.0

-

1. Data based on characterization results.

2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a

write/erase operation addresses a single byte.

V

ms

ms

ms

cycles

years

mA

DS7147 Rev 10

65/103

87

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