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ST72324BLJ2B5 View Datasheet(PDF) - STMicroelectronics

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Description
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ST72324BLJ2B5 Datasheet PDF : 154 Pages
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ST72324Lxx
10-BIT ADC CHARACTERISTICS (Cont’d)
12.12.3 ADC Accuracy
Conditions: VDD=3V 1)
Symbol
Parameter
|ET| Total unadjusted error 1)
|EO| Offset error 1)
|EG| Gain Error 1)
|ED| Differential linearity error 1)
|EL| Integral linearity error 1)
Conditions
CPU in run mode
@ fADC 1 MHz.
CPU in run mode
@ fADC 1 MHz.
Flash Devices
Typ Max2)
ROM Devices
Typ Max
Unit
4
6
2.6
4
3
5
1.3
2.6
0.5
4.5
1
2.8
LSB
1.5
4.5
1.6
3.5
1.5
4.5
1.7
2.5
Notes:
1. ADC Accuracy vs. Negative Injection Current: Injecting negative current may reduce the accuracy of the conversion
being performed on another analog input. The effect of negative injection current on robust pins is specified in Section
12.12.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 12.8 does not affect the ADC
accuracy.
2. Data based on characterization results, monitored in production to guarantee 99.73% within ± max value from -40°C
to 85°C ( ± 3σ distribution limits).
Figure 82. ADC Accuracy Characteristics
1023
1022
1021
7
6
5
4
3
2
1
Digital Result ADCDR
1LSBIDEAL
=
V-----A----R-----E----F----------V----S-----S----A---
1024
(2)
ET
EO
EL
1 LSBIDEAL
0
1234567
VSSA
EG
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
(3)
(1)
ED
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
1021 1022 1023 1024
VAREF
Vin (LSBIDEAL)
135/154
1

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