STM8S005K6T6CTR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S005K6T6CTR

Value line, 16 MHz STM8S 8-bit MCU, 32 Kbytes Flash, data EEPROM,10-bit ADC, timers, UART, SPI, I²C

STMicroelectronics 

STM8S005K6 STM8S005C6

Electrical characteristics

Table 35: Flash program memory/data EEPROM memory

Symbol Parameter

Conditions Min(1) Typ Max Unit

VDD Operating voltage (all modes,

execution/write/erase)

fCPU ≤ 16 MHz 2.95

5.5 V

tprog Standard programming time

(including erase) for

byte/word/block (1 byte/4

bytes/128 bytes)

6.0 6.6 ms

Fast programming time for 1 block

(128 bytes)

3.0 3.3 ms

terase Erase time for 1 block (128 bytes)

NRW

Erase/write cycles(2)(program

memory)

TA = 85 °C

3.0 3.3 ms

100

cycles

Erase/write cycles(data memory)(2) TA = 85 ° C

100 k

tRET Data retention (program memory) TRET = 55° C 20

after 100 erase/write cycles at TA

= 85 °C

years

Data retention (data memory) after

20

10 k erase/write cycles at TA = 85

°C

Data retention (data memory) after TRET = 85° C 1

100 k erase/write cyclesat TA = 85

°C

IDD

Supply current (Flash

programming or erasing for 1 to

128 bytes)

2.0

mA

(1) Data based on characterization results, not tested in production.

(2) The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes

even when a write/erase operation addresses a single byte.

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