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STM32F100RCT6BTR View Datasheet(PDF) - STMicroelectronics

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STM32F100RCT6BTR Datasheet PDF : 98 Pages
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STM32F100xC, STM32F100xD, STM32F100xE
Electrical characteristics
5.3.14 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 43 are derived from tests
performed under the conditions summarized in Table 9. All I/Os are CMOS and TTL
compliant.
Table 43. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Standard I/O input
low level voltage
VIL I/O FT(1) input low
level voltage
Standard I/O input
high level voltage
VIH I/O FT(1) input high
level voltage
Standard I/O Schmitt
trigger voltage
Vhys hysteresis(2)
I/O FT Schmitt trigger
voltage hysteresis(2)
VDD > 2 V
VDD 2 V
–0.3
–0.3
0.41*(VDD–2 V) +1.3 V
0.42*(VDD–2)+1 V
200
5% VDD(3)
0.28*(VDD–2 V)+0.8 V
0.32*(VDD–2 V)+0.75 V
V
VDD+0.3
5.5
5.2
mV
mV
Ilkg
Input leakage
current(4)
VSS VIN VDD
Standard I/Os
VIN = 5 V
I/O FT
±1
µA
3
RPU
Weak pull-up
equivalent resistor(5)
VIN = VSS
30
40
50
kΩ
RPD
Weak pull-down
equivalent resistor(5)
VIN = VDD
30
40
50
kΩ
CIO I/O pin capacitance
5
pF
1. FT = 5V tolerant. To sustain a voltage higher than VDD+0.3 the internal pull-up/pull-down resistors must be disabled.
2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by design, not tested in production.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimum (~10% order).
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 23 and Figure 24 for standard I/Os, and
in Figure 25 and Figure 26 for 5 V tolerant I/Os.
Doc ID 15081 Rev 7
69/98

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