ST7PLIT115BF1M3 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ST7PLIT115BF1M3
STMicroelectronics
ST7PLIT115BF1M3 Datasheet PDF : 159 Pages
| |||
ST7LITE1xB
13.6 MEMORY CHARACTERISTICS
TA = -40°C to 125°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
Symbol
Parameter
VRM Data retention mode 1)
Conditions
Min
Typ
Max
Unit
HALT mode (or RESET)
1.6
V
13.6.2 FLASH Program Memory
Symbol
Parameter
Conditions
Min
VDD
tprog
tRET
NRW
IDD
Refer to operating range of
Operating voltage for Flash write/erase VDD with TA, section 13.3.1 2.7
on page 112
Programming time for 1~32 bytes 2)
TA=−40 to +125°C
Programming time for 1.5 kBytes
TA=+25°C
Data retention 4)
TA=+55°C3)
20
Write erase cycles
TA=+25°C
10K
Read / Write / Erase modes
Supply current 6)
fCPU = 8MHz, VDD = 5.5V
No Read/No Write Mode
Power down mode / HALT
Typ
5
0.24
0
Max Unit
5.5
V
10
ms
0.48
s
years
cycles
2.6 mA
100
μA
0.1
μA
13.6.3 EEPROM Data Memory
Symbol
VDD
tprog
tret
NRW
Parameter
Conditions
Operating voltage for EEPROM
write/erase
Programming time for 1~32
bytes
Data retention 4)
Write erase cycles
Refer to operating range of VDD with
TA, section 13.3.1 on page 112
TA=−40 to +125°C
TA=+55°C 3)
TA=+25°C
Min Typ Max Unit
2.7
5.5 V
5
20
300K
10 ms
years
cycles
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
126/159
Share Link: 