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M48T212VMH View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M48T212VMH
STMICROELECTRONICS
STMicroelectronics 
M48T212VMH Datasheet PDF : 35 Pages
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M48T212V
Operation
making the final choice of an SRAM to use. The SRAM must be designed in a way where
the chip enable input disables all other inputs to the SRAM. This allows inputs to the
M48T212V and SRAMs to be “Don't care” once VCC falls below VPFD(min). The SRAM
should also guarantee data retention down to VCC = 2.0V. The chip enable access time must
be sufficient to meet the system needs with the chip enable output propagation delays
included.
If the SRAM includes a second chip enable pin (E2), this pin should be tied to VOUT.
If data retention lifetime is a critical parameter for the system, it is important to review the
data retention current specifications for the particular SRAMs being evaluated. Most SRAMs
specify a data retention current at 3.0V. Manufacturers generally specify a typical condition
for room temperature along with a worst case condition (generally at elevated
temperatures). The system level requirements will determine the choice of which value to
use.
The data retention current value of the SRAMs can then be added to the IBAT value of the
M48T212V to determine the total current requirements for data retention. The available
battery capacity for the SNAPHAT® of your choice can then be divided by this current to
determine the amount of data retention available (see Table 20 on page 33).
For a further more detailed review of lifetime calculations, please see Application Note
AN1012.
15/35

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