STP60NE06-16FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP60NE06-16FP
STMicroelectronics
STP60NE06-16FP Datasheet PDF : 11 Pages
| |||
STP60NE06-16/FP
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
STP60NE06-16 STP60NE06-16FP
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain- gate Voltage (RGS = 20 kΩ)
60
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont.) at TC = 25 °C
60
35
A
ID
Drain Current (cont.) at TC = 100 °C
42
24
A
IDM (1)
Drain Current (pulsed)
240
240
A
Ptot
Total Dissipation at TC = 25 °C
150
40
W
Derating Factor
1
0.3
W°/C
VISO
Insulation Withstand Voltage (DC)
–
2000
V
dv/dt (2) Peak Diode Recovery voltage slope
t(s) Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
uc Note: 1. Pulse width limited by safe operating area
d 2. ISD ≤ 60A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Pro Table 4. Thermal Data
te Symbol
Parameter
ole Rthj-case
bs Rthj-amb
O Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
t(s) - Table 5. Avalanche Characteristics
c Symbol
Parameter
du IAR
Avalanche Current, Repetitive or Not-Repetitive
ro (pulse width limited by Tj max, δ < 1%)
P EAS
Single Pulse Avalanche Energy
Obsolete(starting Tj = 25 °C; ID = IAR; VDD = 25 V)
6
-65 to 175
175
Value
TO-220
TO220-FP
1
3.75
62.5
300
Max Value
60
350
V/ns
°C
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
2/11
Share Link: 