STP60NE06-16FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP60NE06-16FP

N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE™" POWER MOSFET

STMicroelectronics 

STP60NE06-16/FP

Table 11. Source Drain Diode

Symbol

Parameter

Test Conditions

ISD

Source-drain Current

ISDM (1) Source-drain Current

(pulsed)

VSD (2) Forward On Voltage

ISD = 60 A; VGS = 0

trr

Reverse Recovery Time ISD = 60 A; di/dt = 100 A/µs

Qrr

Reverse RecoveryCharge VDD = 30 V; Tj = 150 °C

IRRAM Reverse RecoveryCharge

Note: 1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

60

A

240

A

1.5

V

100

ns

0.4

µC

8

A

Figure 3. Safe Operating Area for TO-220

Figure 4. Safe Operating Area for TO-220FP

Obsolete Product(s) - Obsolete Product(s) Figure 5. Thermal Impedance for TO-220

Figure 6. Thermal Impedance for TO-220FP

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