STP60NE06-16FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP60NE06-16FP

N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE™" POWER MOSFET

STMicroelectronics 

STP60NE06-16/FP

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)

Table 6. Off

Symbol

Parameter

V(BR)DSS Drain-source

Breakdown Voltage

IDSS Zero Gate Voltage

Drain Current (VGS = 0)

IGSS

Gate-body Leakage

Current (VDS = 0)

Test Conditions

ID = 250 µA VGS = 0

VDS = Max Rating

VDS = Max Rating Tc = 125 °C

VGS = ± 20 V

Min. Typ. Max. Unit

60

V

1

µA

10

µA

± 100 nA

Table 7. On (1)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

VGS(th) Gate Threshold Voltage

VDS = VGS; ID = 250 µA

2

3

4

V

RDS(on) Static Drain-source On

) Resistance

VGS = 10V; ID = 30 A

t(s Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

uc Table 8. Dynamic

rod Symbol

Parameter

Test Conditions

P gfs (1

Forward

Transconductance

VDS > ID(on) x RDS(on)max; ID = 30 A

te Ciss Input Capacitance

VDS = 25 V; f = 1 MHz; VGS = 0

ole Coss Output Capacitance

bs Crss Reverse Transfer

Capacitance

- O Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

t(s) Table 9. Switching On

c Symbol

Parameter

u td(on) Turn-on Time

rod tr

Rise Time

P Qg Total Gate Charge

te Qgs Gate-Source Charge

le Qgd Gate-Drain Charge

Test Conditions

VDD = 30 V; ID = 30 A

RG = 4.7 Ω; VGS = 10 V

VDD = 48 V; ID = 60 A; VGS = 10 V

Obso Table 10. Switching Off

0.013 0.016 Ω

Min. Typ. Max. Unit

20 35

S

4600 6200 pF

580 800

pF

140 200

pF

Min. Typ. Max. Unit

40

60

ns

125 180

ns

115 160 nC

25

nC

40

nC

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

tr(Voff) Off-voltage Rise Time

VDD = 48 V; ID = 60 A

15

25

ns

tf

Fall Time

RG = 4.7 Ω; VGS = 10 V

150 210

ns

tc

Cross-over Time

180 260

ns

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