STP16NE06L/FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP16NE06L/FP

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE™ POWER MOSFET

STMicroelectronics 

STP16NE06L

STP16NE06L/FP

N - CHANNEL ENHANCEMENT MODE

SINGLE FEATURE SIZE™ POWER MOSFET

T Y PE

ST P16NE06L

ST P16NE06LFP

VDSS

60 V

60 V

RDS(on)

< 0.12 Ω

< 0.12 Ω

ID

16 A

11 A

TARGET DATA

s TYPICAL RDS(on) = 0.09 Ω

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s 175oC OPERATING TEMPERATURE

s HIGH dV/dt CAPABILITY

s APPLICATION ORIENTED

CHARACTERIZATION

3

2

1

3

2

1

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique ”Single Feature Size”

process whereby a single body is implanted on a

strip layout structure. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s DC MOTOR CONTROL

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

S ym b o l

Parameter

VDS Drain-source Volt age (VGS = 0)

VDGR Drain- gate Volt age (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

IDM(•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation W ithst and Voltage (DC)

dV/dt Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. O perating Junction Temperature

(•) Pulse width limited by safe operating area

Value

Un it

STP16NE06L STP16NE06LFP

60

V

60

V

± 15

V

16

11

A

10

7

A

64

64

A

60

30

W

0.4

0.2

W /o C



2000

V

6

-65 to 175

175

(1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

V/ns

oC

oC

October 1997

1/7

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