STP16NE06L/FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP16NE06L/FP Datasheet PDF : 7 Pages
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STP16NE06L/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
Qg
Qgs
Qgd
P a ram et er
Turn-on T ime
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG =4.7 W
ID = 8 A
VGS = 5V
VDD = 40 V ID = 16 A VGS = 5 V
Min.
Typ .
M a x.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vo f f)
tf
tc
P a ram et er
Off-voltage Rise Time
Fall Time
Cross-over T ime
Test Conditions
VDD = 48 V ID = 16 A
RG =4.7 Ω VGS = 5 V
Min.
Typ .
M a x.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
P a ram et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward O n Volt age
ISD = 16 A
trr
Reverse Recovery
ISD = 16 A
Time
Qrr
Reverse Recovery
Charge
VDD = 30 V
IRRM Reverse Recovery
Cu r re nt
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
VGS = 0
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ .
M a x.
Unit
A
A
1.5
V
ns
µC
A
3/7
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