STP16NE06L/FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP16NE06L/FP Datasheet PDF : 7 Pages
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STP16NE06L/FP
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
T O-2 20
T O-220F P
2.5
5
62.5
0.5
300
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
16
80
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Dr ain - s o ur c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15V
Min.
60
Typ .
M a x.
Unit
V
1
µA
10
µA
æ 100 nA
ON (∗)
Symb ol
V GS(th )
RDS( o n )
P a ram et er
Test Conditions
Gate T hreshold Voltage VDS = VGS ID = 250 µA
St atic Drain-source On VGS = 5V ID = 8 A
Re s is ta nc e
VGS = 10V ID = 8 A
ID(o n)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ .
3
0.090
M a x.
4
0.12
Unit
V
Ω
16
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =8 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ .
6
M a x.
Unit
S
800
pF
100
pF
50
pF
2/7
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