BAP64-06 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

BAP64-06

Silicon PIN diode

NXP Semiconductors. 

NXP Semiconductors

BAP64-06

Silicon PIN diode

3 Ordering information

Table 2. Ordering information

Type number Package

Name

Description

BAP64-06 -

plastic surface-mounted package; 3 leads

Version

SOT23

4 Marking

Table 3. Marking

Type number

BAP64-06

Marking

6K*

Description

* = t : made in Malaysia

* = W : made in China

5 Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Values are specified per diode.

Symbol Parameter

Conditions

Min

Max

Unit

VR

reverse voltage

-

175

V

IF

forward current

-

100

mA

Ptot

total power dissipation

Tsp = 90 °C

-

250

mW

Tstg

storage temperature

-65

+150

°C

Tj

junction temperature

-65

+150

°C

6 Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter

Rth(j-sp) thermal resistance from junction to solder point

Conditions

Typ Unit

220 K/W

7 Characteristics

Table 6. Characteristics

Values are specified per diode; Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

VF

forward voltage

IF = 50 mA

IR

reverse current

VR = 60 V

VR = 20 V

Cd

diode capacitance

see Figure 1; f = 1 MHz;

VR = 0 V

Min Typ Max Unit

-

0.95 1.1

V

-

-

10

μA

-

-

1

μA

-

0.52 -

pF

BAP64-06

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 5.0 — 22 March 2019

© NXP B.V. 2019. All rights reserved.

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