BAP64-06 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BAP64-06 Datasheet PDF : 9 Pages
| |||
NXP Semiconductors
BAP64-06
Silicon PIN diode
Symbol
rD
τL
LS
Parameter
Conditions
diode forward resistance
VR = 1 V
VR = 20 V
see Figure 2; f = 100 MHz;
IF = 0.5 mA
charge carrier life time
IF = 1 mA
IF = 10 mA
IF = 100 mA
when switched from IF = 10 mA to IR =
6 mA; RL = 100 Ω; measured at IR = 3
mA
series inductance
[1] Guaranteed on AQL basis: inspection level S4, AQL 1.0.
7.1 Graphical data
600
Cd
(fF)
500
aaa-017742
102
rD
()
Min
-
-
[1]
-
-
-
-
-
-
Typ Max Unit
0.37 -
pF
0.23 0.35 pF
20
40
Ω
10
20
Ω
2.0
3.8
Ω
0.7
1.35 Ω
1.55 -
μs
1.4
-
nH
mcd773
400
10
300
200
1
100
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Figure 1. Diode capacitance as a function of reverse
voltage; typical values
10-110-1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Figure 2. Forward resistance as a function of forward
current; typical values
BAP64-06
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5.0 — 22 March 2019
© NXP B.V. 2019. All rights reserved.
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