STP5N80K5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP5N80K5

N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220 package

STMicroelectronics 

STP5N80K5

N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5

Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

STP5N80K5

VDS

800 V

RDS(on) max.

ID

1.75 Ω

4A

 Industry’s lowest RDS(on) x area

 Industry’s best FoM (figure of merit)

 Ultra-low gate charge

 100% avalanche tested

 Zener-protected

Applications

 Switching applications

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Order code

STP5N80K5

Table 1: Device summary

Marking

Package

5N80K5

TO-220

Packing

Tube

May 2016

DocID028511 Rev 2

This is information on a product in full production.

1/13

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