STP5N80K5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP5N80K5
STMicroelectronics
STP5N80K5 Datasheet PDF : 13 Pages
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STP5N80K5
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 7: Switching times
Electrical characteristics
Test conditions
Min. Typ. Max. Unit
VDD= 400 V, ID = 2 A, RG = 4.7 Ω
- 12.7 -
ns
VGS = 10 V
- 11.7 -
ns
(see Figure 14: "Test circuit for
resistive load switching times" and
-
23
-
ns
Figure 19: "Switching time waveform") - 14.8 -
ns
Symbol Parameter
Table 8: Source-drain diode
Test conditions
ISD Source-drain current
ISDM(1)
Source-drain current
(pulsed)
VSD(2) Forward on voltage
ISD = 4 A, VGS = 0 V
trr
Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 4 A, di/dt = 100
A/µs,VDD = 60 V
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
trr
Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
4
A
-
16 A
-
1.5 V
- 265
ns
- 1.59
µC
- 12
A
- 386
ns
- 2.18
µC
- 11.3
A
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS= ± 1mA, ID= 0 A
Min. Typ. Max. Unit
±30 -
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID028511 Rev 2
5/13
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