STP5N80K5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP5N80K5
STMicroelectronics
STP5N80K5 Datasheet PDF : 13 Pages
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STP5N80K5
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
ID(1)
PTOT
dv/dt (2)
dv/dt (3)
Tj
Tstg
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
± 30
4
2.3
16
60
4.5
50
- 55 to 150
V
A
A
A
W
V/ns
°C
Notes:
(1)Pulse width limited by safe operating area
(2)ISD ≤ 4 A, di/dt = 100 A/μs; VDS peak < V(BR)DSS, VDD = 640 V
(3)VDS ≤ 640 V
Symbol
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
2.08
62.5
Unit
°C/W
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value Unit
1.2 A
165 mJ
DocID028511 Rev 2
3/13
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