STF32N65M5,STI32N65M5,STP32N65M5,STW32N65M5
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage
t(s) IDSS
Zero gate voltage drain current
duc IGSS
Gate body leakage current
ro VGS(th)
Gate threshold voltage
P RDS(on)
Static drain-source on resistance
lete 1. Defined by design, not subject to production test.
ID = 1 mA, VGS = 0 V
VDS = 650 V, VGS = 0 V,
VDS = 650 V, VGS = 0 V,
TC = 125 °C (1)
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 12 A
650
1
100
±100
3
4
5
95
119
Obso Symbol
) - Ciss
t(s Coss
uc Crss
d Co(tr) (1)
Pro Co(er) (2)
teRg
leQg
so Qgs
Ob Qgd
Table 5. Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy
related
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VGS = 0 V, VDS = 0 to 520 V
f = 1 MHz, ID= 0 A
VDD = 520 V, ID = 12 A,
VGS = 0 to 10 V
(see Figure 19. Test circuit for
gate charge behavior)
Min.
-
-
-
-
-
Typ.
3320
75
5
210
70
2
72
17
29
Max.
-
-
-
-
-
V
µA
µA
nA
V
mΩ
Unit
pF
pF
pF
Ω
nC
1. Co(tr) time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
2. Co(er) energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS
increases from 0 to 80% VDSS.
Symbol
td(off)
tr
tc
Parameter
Turn-off delay time
Rise time
Cross time
tf
Fall time
Table 6. Switching times
Test conditions
VDD = 400 V, ID = 15 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20. Test circuit for
inductive load switching and
diode recovery times and
Figure 23. Switching time
waveform)
Min.
-
Typ. Max. Unit
53
12
29
-
ns
16
DS12808 - Rev 1
page 3/21