STP32N65M5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP32N65M5

N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages

STMicroelectronics 

STF32N65M5,STI32N65M5,STP32N65M5,STW32N65M5

Electrical characteristics curves

Figure 13. Normalized gate threshold voltage vs

temperature

VGS (th)

(norm)

1.10

AM05459v1

ID = 250 μA

1.00

Figure 14. Normalized on resistance vs temperature

RDS (on)

(norm)

2.1

AM05460v1

1.9

VGS = 10 V

1.7

1.5

0.90

t(s) 0.80

duc 0.70

ro -50 -25 0 25 50 75 100 TJ(°C)

1.3

1.1

0.9

0.7

0.5

-50 -25 0

25 50 75 100 TJ(°C)

lete P Figure 15. Source-drain diode forward characteristics

o VSD

s (V)

TJ =-5 0 °C

b 1.2

AM05461v1

- O 1.0

t(s) 0.8

uc 0.6

d TJ=150°C

ro 0.4

P 0.2

TJ =2 5 °C

lete 0 0

10 20 30 40 50 ISD(A)

Figure 16. Normalized V(BR)DSS vs temperature

V(BR)DSS

AM05453v1

1.03

1.01

ID = 1 mA

0.99

0.97

0.95

3

-50

0

TJ

Obso Figure 17. Switching energy vs gate resistance

E

μJ )

ID=15A

VCL=400V

400

VG S =1 0 V

AM05458v1

Eon

300

Eoff

200

100

0

0

10

20

30

40

RG(Ω

* Eon including reverse recovery of a SiC diode.

DS12808 - Rev 1

page 7/21

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