STP32N65M5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP32N65M5

N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages

STMicroelectronics 

STF32N65M5,STI32N65M5,STP32N65M5,STW32N65M5

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

Source-drain current

Source-drain current (pulsed)

24

-

A

96

VSD (2)

Forward on voltage

ISD = 24 A, VGS = 0 V

-

1.5

V

trr

Reverse recovery time

ISD = 24 A, di/dt = 100 A/µs

375

ns

Qrr

) IRRM

Reverse recovery charge

Reverse recovery current

VDD = 60 V (see

Figure 20. Test circuit for

inductive load switching and

diode recovery times)

-

6

33

t(s trr

uc Qrr

Prod IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 24 A, di/dt = 100 A/µs

440

VDD = 60 V, Tj = 150 °C

8

(see Figure 20. Test circuit for

-

inductive load switching and

36

diode recovery times)

te 1. Pulse width limited by safe operating area.

Obsolete Product(s) - Obsole 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

µC

A

ns

µC

A

DS12808 - Rev 1

page 4/21

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