PIC16F1512T-E/SO 查看數據表（PDF） - Microchip Technology

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PIC16F1512T-E/SO

28-Pin Flash Microcontrollers with XLP Technology

Microchip Technology 

PIC16(L)F1512/3

TABLE 25-3: POWER-DOWN CURRENTS (IPD)(1,2,4) (CONTINUED)

PIC16LF1512/3

Standard Operating Conditions (unless otherwise stated)

PIC16F1512/3

Param

No.

Device Characteristics

Min.

Typ†

Max.

+85°C

Max.

+125°C

Units

VDD

Conditions

Note

D026A*

D026A*

— 250 400

410

A

1.8 A/D Current (Note 3),

— 260 420

430

A

3.0 conversion in progress

— 280 430

440

A

2.3 A/D Current (Note 3),

— 300 450

460

A

3.0 conversion in progress

— 320 470

480

A

5.0

* These parameters are characterized but not tested.

† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are

not tested.

Note 1:

The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is

enabled. The peripheral  current can be determined by subtracting the base IDD or IPD current from this limit. Max

values should be used when calculating total current consumption.

2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with

the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.

3: A/D oscillator source is FRC.

4: Specification for PIC16F1512/3 devices assumes that Low-Power Sleep mode is selected, when available, via the

VREGCON register (see Section 8.2.2 “Peripheral Usage in Sleep” and Register 8-1).

 2012-2014 Microchip Technology Inc.

DS40001624C-page 291

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