PIC16F1512T-E/SO 查看數據表（PDF） - Microchip Technology

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PIC16F1512T-E/SO

28-Pin Flash Microcontrollers with XLP Technology

Microchip Technology 

PIC16(L)F1512/3

TABLE 25-5: MEMORY PROGRAMMING REQUIREMENTS

Standard Operating Conditions (unless otherwise stated)

Param

No.

Sym.

Characteristic

Program Memory

Programming Specifications

D110 VIHH Voltage on MCLR/VPP/RA5 pin

D111 IDDP Supply Current during

Programming

D112 VBE VDD for Bulk Erase

D113 VPEW VDD for Write or Row Erase

Min.

Typ† Max. Units

Conditions

8.0

—

9.0

V (Note 2, Note 3)

—

—

10

mA

2.7

—

VDD

V

max.

VDD

min.

—

VDD

V

max.

D114 IPPPGM Current on MCLR/VPP during Erase/

—

Write

—

1.0

mA

D115 IDDPGM Current on VDD during Erase/Write

—

5.0

mA

Program Flash Memory

D121 EP

Cell Endurance

10K

—

— E/W -40C to +85C (Note 1)

D122 VPRW VDD for Read/Write

VDD

—

VDD

V

min.

max.

D123 TIW Self-timed Write Cycle Time

—

2

2.5 ms

D124 TRETD Characteristic Retention

—

40

— Year Provided no other

specifications are violated

D125 EHEFC High-Endurance Flash Cell

100K

—

— E/W 0C  TA  +60°C, lower

byte last 128 addresses

†

Note 1:

2:

3:

Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Self-write and Block Erase.

Required only if single-supply programming is disabled.

The MPLAB® ICD 2 does not support variable VPP output. Circuitry to limit the MPLAB ICD 2 VPP voltage

must be placed between the MPLAB ICD 2 and target system when programming or debugging with the

MPLAB ICD 2.

 2012-2014 Microchip Technology Inc.

DS40001624C-page 293

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