M24M01-RMN6P 查看數據表（PDF） - STMicroelectronics

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M24M01-RMN6P

1-Mbit serial I²C bus EEPROM

STMicroelectronics 

M24M01-R M24M01-DF

DC and AC parameters

Table 10. Cycling performance

Symbol Parameter

Test condition(1)

Max.

Unit

Ncycle

Write cycle

endurance(2)

TA ≤ 25 °C, VCC(min) < VCC < VCC(max)

TA = 85 °C, VCC(min) < VCC < VCC(max)

4,000,000 Write cycle(3)

1,200,000

1. Cycling performance for products identified by process letter K

2. The write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2,

4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and qualification.

3. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock

Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write

Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling

Table 11. Memory cell data retention

Parameter

Test condition

Min.

Unit

Data retention(1)

TA = 55 °C

200

Year

1. For products identified by process letter . The data retention behavior is checked in production, while the

200-year limit is defined from characterization and qualification results.

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