28F016SA
E
5.9 AC Characteristics for CE#–Controlled Command Write Operations:
COMMERCIAL AND EXTENDED TEMPERATURE(1)
VCC = 3.3V ±10%, TA = 0°C to +70°C, -40°C to +85°C
Temp
Commercial
Comm/Ext
Sym
Parameter
Speed
-120
-150
Unit
Notes Min Typ Max Min Typ Max
tAVAV Write Cycle Time
120
150
ns
tVPEH VPP Setup to CE# Going High
3
100
100
ns
tPHWL RP# Setup to WE# Going Low
480
480
ns
tWLEL WE# Setup to CE# Going Low
0
0
ns
tAVEH Address Setup to CE# Going
2,6
75
75
ns
High
tDVEH Data Setup to CE# Going High
2,6
75
tELEH CE# Pulse Width
75
tEHDX Data Hold from CE# High
2
10
tEHAX Address Hold from CE# High
2
10
tEHWH WE Hold from CE# High
10
tEHEL CE# Pulse Width High
45
tGHEL Read Recovery before Write
0
tEHRL CE# High to RY/BY# Going Low
tRHPL
RP# Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
3
0
75
75
10
10
10
75
0
100
0
ns
ns
ns
ns
ns
ns
ns
100 ns
ns
tPHEL RP# High Recovery to CE#
1
Going Low
1
µs
tEHGL Write Recovery before Read
95
120
ns
tQVVL VPP Hold from Valid Status
0
Register (CSR, GSR, BSR)
Data and RY/BY# High
0
µs
tEHQV1 Duration of Word/Byte Program 4,5
5
9 Note 5
9 Note µs
Operation
7
7
tEHQV2 Duration of Block Erase
Operation
4
0.3
10 0.3
10 sec
42