T28F016SA-080 View Datasheet(PDF) - Intel
Part Name
Description
Manufacturer
T28F016SA-080 Datasheet PDF : 55 Pages
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E
28F016SA
5.11 Erase and Word/Byte Write Performance, Cycling Performance and
Suspend Latency(3)
VCC = 3.3V ± 10%, VPP = 12.0V ± 0.6V, TA = 0°C to +70°C
Sym
Parameter
Notes Min
Typ(1) Max Units Test Conditions
Page Buffer Byte Write Time 2,4
3.26 Note 6 µs
Page Buffer Word Write Time 2,4
6.53 Note 6 µs
tWHRH1 Word/Byte Program Time
2
9
Note 6 µs
tWHRH2 Block Program Time
2
0.6
2.1 sec Byte Prog. Mode
tWHRH3 Block Program Time
2
0.3
1.0 sec Word Prog. Mode
Block Erase Time
2
0.8
10 sec
Full Chip Erase Time
2
25.6
sec
Erase Suspend Latency Time
to Read
7.0
µs
Auto Erase Suspend Latency
Time to Write
10.0
µs
Erase Cycles
5 100,000 1,000,000
Cycles
VCC = 5.0V ± 10%, VPP = 12.0V ± 0.6V, TA = 0°C to +70°C
Sym
Parameter
Notes Min
Typ(1) Max Units Test Conditions
Page Buffer Byte Write Time 2,4
2.76 Note 6 µs
Page Buffer Word Write Time 2,4
5.51 Note 6 µs
tWHRH1 Word/Byte Program Time
2
6
Note 6 µs
tWHRH2 Block Program Time
2
0.4
2.1 sec Byte Prog. Mode
tWHRH3 Block Program Time
2
0.2
1.0 sec Word Prog. Mode
Block Erase Time
2
0.6
10 sec
Full Chip Erase Time
2
19.2
sec
Erase Suspend Latency Time
to Read
5.0
µs
Auto Erase Suspend Latency
Time to Write
8.0
µs
Erase Cycles
5 100,000 1,000,000
Cycles
NOTES:
1. +25°C, VCC = 3.3V or 5.0V nominal, VPP = 12.0V nominal, 10K cycles.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. This assumes using the full Page Buffer to data program to the flash memory (256 bytes or 128 words).
5. Typical 1,000,000 cycle performance assumes the application uses block retirement techniques.
6. This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel Sales office
for more information.
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