T28F016SA-080 View Datasheet(PDF) - Intel
Part Name
Description
Manufacturer
T28F016SA-080 Datasheet PDF : 55 Pages
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28F016SA
E
5.9 AC Characteristics for CE#–Controlled Command Write Operations:
COMMERCIAL AND EXTENDED TEMPERATURE(1) (Continued)
VCC = 5.0 to 10%, 5.0V ± 5%, TA = 0°C to +70°C, –40°C to +85°C
Temp
Commercial
Commercial
Comm/Ext
Versions
Sym Parameter
VCC ± 5% 28F016SA-070
Unit
VCC ± 10%
28F016SA-080 28F016SA-100
Notes Min Typ Max Min Typ Max Min Typ Max
tRHPL RP# Hold from
3
0
0
0
ns
Valid Status
Register (CSR,
GSR, BSR)
Data and
RY/BY# High
tPHEL RP# High
1
1
1
µs
Recovery to
CE# Going Low
tEHGL Write Recovery
60
65
80
µs
before Read
tQVVL VPP Hold from
0
0
0
µs
Valid Status
Register (CSR,
GSR, BSR)
Data and
RY/BY# High
tEHQV1
Duration of
Word/Byte
Program
Operation
4,5
4.5 6 Note 4.5 6 Note 4.5 6 Note µs
7
7
7
tEHQV2 Duration of
Block Erase
Operation
4
0.3
10 0.3
10 0.3
10 sec
NOTES:
CE# is defined as the latter of CE0# or CE1# going low or the first of CE0# or CE1# going high.
1. Read timings during data program and block erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Data program/block erase durations are measured to valid Status Register data.
5. Word/byte program operations are typically performed with 1 programming pulse.
6. Address and data are latched on the rising edge of CE# for all command write operations.
7. This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel sales office
for more information.
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