ISPGDX160V-3Q208I View Datasheet(PDF) - Lattice Semiconductor
Part Name
Description
Manufacturer
ISPGDX160V-3Q208I Datasheet PDF : 36 Pages
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Specifications ispGDX160VA
Absolute Maximum Ratings 1,2
Supply Voltage Vcc ................................. -0.5 to +5.4V
Input Voltage Applied ............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature ................................ -65 to 150°C
S Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied ... 150°C
E 1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
IC 2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.
D DC Recommended Operating Conditions
V E SYMBOL
E VCC
D U VCCIO
PARAMETER
Supply Voltage
I/O Reference Voltage
Commercial
Industrial
TA = 0°C to +70°C
TA = -40°C to +85°C
MIN.
3.00
3.00
2.3
MAX. UNITS
3.60
V
3.60
V
3.60
V
Table 2-0005/gdx160va
IN Capacitance (TA=25oC, f=1.0 MHz)
T SYMBOL
PARAMETER
T C1
I/O Capacitance
EC N C2
Dedicated Clock Capacitance
PACKAGE TYPE
PQFP
BGA, fpBGA
PQFP
BGA, fpBGA
TYPICAL
7
10
8
10
UNITS
pf
pf
pf
pf
TEST CONDITIONS
VCC = 3.3V, VI/O = 2.0V
VCC = 3.3V, VY= 2.0V
Table 2-0006/gdx160va
L O Erase/Reprogram Specifications
E C PARAMETER
S DIS Erase/Reprogram Cycles
MINIMUM
10,000
MAXIMUM
—
UNITS
Cycles
8
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