M25PE80-VMN6TP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M25PE80-VMN6TP

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

STMicroelectronics 

M25PE80

Power-up and Power-down

Figure 24. Power-up timing

VCC

VCC(max)

Program, Erase and Write Commands are Rejected by the Device

Chip Selection Not Allowed

VCC(min)

Reset State

of the

Device

VWI

tVSL

Read Access allowed

Device fully

accessible

tPUW

time

AI04009C

Table 14. Power-Up timing and VWI threshold

Symbol

Parameter

Min.

tVSL(1) VCC(min) to S low

30

tPUW(1) Time delay before the first Write, Program or Erase instruction

1

VWI(1) Write Inhibit Voltage

1.5

1. These parameters are characterized only, over the temperature range –40°C to +85°C.

Max. Unit

µs

10 ms

2.5 V

45/61

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