10 Wafer and die specifications
10 Wafer and die specifications
M69KB096AB
Table 24. Dimensions
Wafer Diameter
200mm (8")
Wafer Thickness
750± 25µm (29.5±1.0mil)
Die Size (stepping interval)
5,009.365µm x 5,005.795µm
Street Width Along X-Axis (dsw_X) 102µm
Street Width Along Y-Axis (dsw_Y) 102µm
Center of Street (COS) (relative to
Bond Pad 1)
X = -222.98µm, Y = 160.08µm (X = -8.779mil, Y = 6.303mil)
Bond Pad Size
85µm x 100µm (3.35mil x 3.94mil)
Passivation Openings (MIN)
75µm x 90µm (2.95mil x 3.54mil)
Minimum Bond Pad Pitch
119.00µm (4.685mil)
Pad Count
71
66/73