PIC16C62X
12.3 DC CHARACTERISTICS: PIC16CR62XA-04 (Commercial, Industrial, Extended)
PIC16CR62XA-20 (Commercial, Industrial, Extended)
PIC16LCR62XA-04 (Commercial, Industrial, Extended)
(CONT.)
PIC16CR62XA-04
PIC16CR62XA-20
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial and
0°C ≤ TA ≤ +70°C for commercial and
-40°C ≤ TA ≤ +125°C for extended
PIC16LCR62XA-04
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial and
0°C ≤ TA ≤ +70°C for commercial and
-40°C ≤ TA ≤ +125°C for extended
Param. Sym
No.
Characteristic
Min Typ† Max Units
Conditions
D020 IPD
Power-down Current(3)
— 200 950 nA VDD = 3.0V
— 0.400 1.8 µA VDD = 4.5V*
— 0.600 2.2 µA VDD = 5.5V
— 5.0 9.0 µA VDD = 5.5V Extended Temp.
D020 IPD
Power-down Current(3)
D022 ∆IWDT
D022A ∆IBOR
D023 ∆ICOMP
D023A ∆IVREF
D022 ∆IWDT
D022A ∆IBOR
D023 ∆ICOMP
D023A ∆IVREF
WDT Current(5)
Brown-out Reset Current(5)
Comparator Current for each
Comparator(5)
VREF Current(5)
WDT Current(5)
Brown-out Reset Current(5)
Comparator Current for each
Comparator(5)
VREF Current(5)
— 200 850 nA VDD = 2.5V
— 200 950 nA VDD = 3.0V*
— 0.600 2.2 µA VDD = 5.5V
— 5.0 9.0 µA VDD = 5.5V Extended
—
6.0 10 µA VDD=4.0V
12 µA (125°C)
—
75 125 µA BOD enabled, VDD = 5.0V
—
30 60 µA VDD = 4.0V
—
80 135 µA VDD = 4.0V
—
6.0 10 µA VDD=4.0V
12 µA (125°C)
—
75 125 µA BOD enabled, VDD = 5.0V
—
30 60 µA VDD = 4.0V
—
80 135 µA VDD = 4.0V
1A
FOSC LP Oscillator Operating Frequency 0
— 200 kHz All temperatures
RC Oscillator Operating Frequency 0
— 4 MHz All temperatures
XT Oscillator Operating Frequency 0
— 4 MHz All temperatures
HS Oscillator Operating Frequency 0
— 20 MHz All temperatures
1A
FOSC LP Oscillator Operating Frequency 0
— 200 kHz All temperatures
RC Oscillator Operating Frequency 0
— 4 MHz All temperatures
XT Oscillator Operating Frequency 0
— 4 MHz All temperatures
HS Oscillator Operating Frequency 0
— 20 MHz All temperatures
*
†
Note 1:
2:
3:
4:
5:
6:
These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only and are not
tested.
This is the limit to which VDD can be lowered without losing RAM data.
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current
consumption.
The test conditions for all IDD measurements in Active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
For RC osc configuration, current through REXT is not included. The current through the resistor can be estimated by the
formula: Ir = VDD/2REXT (mA) with REXT in kΩ.
The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the
base IDD or IPD measurement.
Commercial temperature range only.
2003 Microchip Technology Inc.
DS30235J-page 95