STPS1L40 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS1L40 Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
STPS1L40
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
40
SMA / SMB
8
IF(RMS) Forward rms current
STmite flat
2
SMA / SMB TL = 130 °C δ = 0.5
IF(AV)
Average forward current
STmite flat TC = 135 °C δ = 0.5
1
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
60
IRRM Repetitive peak reverse current
tp = 2 µs F = 1 kHz square
1
IRSM Non repetitive peak reverse current tp = 100 µs square
1
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
900
Tstg Storage temperature range
Tj Maximum operating junction temperature (1)
- 65 to + 150
150
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
V
A
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth(j-l) Junction to lead
Rth(j-c) Junction to case
SMA
SMB
STmite flat
30
25
°C/W
20
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1)
Tj = 25 °C
Reverse leakage current
VR = VRRM
-
Tj = 125 °C
-
Tj = 25 °C
-
VF (1) Forward voltage drop
Tj = 125 °C IF = 1 A
-
Tj = 25 °C
-
IF = 2 A
Tj = 125 °C
-
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.23 x IF(AV) + 0.19 IF2(RMS)
-
35
µA
6
10
mA
-
0.5
0.37 0.42
V
-
0.63
0.5 0.61
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Doc ID 5507 Rev 6
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