STP18N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB18N60M2, STP18N60M2,

STW18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg

2

Power MOSFET in D PAK, TO-220 and TO-247 packages

Datasheet - production data

TAB

3

1

D2 PAK

TAB

3

2

1

TO-220

3

2

1

TO-247

Figure 1. Internal schematic diagram

, TAB

Features

Order codes

VDS @

TJmax

RDS(on)

max

ID

STB18N60M2

STP18N60M2

STW18N60M2

650 V

0.28 Ω 13 A

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

• LLC converters, resonant converters

Description

AM15572v1

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

Order codes

STB18N60M2

STP18N60M2

STW18N60M2

Table 1. Device summary

Marking

Package

2

D PAK

18N60M2

TO-220

TO-247

Packaging

Tape and reel

Tube

February 2014

This is information on a product in full production.

DocID024735 Rev 2

1/21

www.st.com

Share Link: