STP18N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP18N60M2
STMicroelectronics
STP18N60M2 Datasheet PDF : 21 Pages
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STB18N60M2, STP18N60M2, STW18N60M2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
(1)
IDM Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
(2)
dv/dt Peak diode recovery voltage slope
(3)
dv/dt MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 13 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V.
3. VDS ≤ 480 V
± 25
13
8
52
110
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
D2PAK
30
Value
TO-220
1.14
62.5
Unit
TO-247
°C/W
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not
IAR repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
EAS Tj=25°C, ID= IAR; VDD=50)
3
A
135
mJ
DocID024735 Rev 2
3/21
21
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