STP18N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP18N60M2
STMicroelectronics
STP18N60M2 Datasheet PDF : 21 Pages
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STB18N60M2, STP18N60M2, STW18N60M2
Electrical characteristics
Figure 8. Static drain-source on-resistance
RDS(on)
(Ω)
0.270
VGS=10V
AM15840v1
0.265
Figure 9. Capacitance variations
C
(pF)
AM15841v1
1000
Ciss
0.260
100
0.255
0.250
0.245
0 2 4 6 8 10 12 ID(A)
10
1
0.1
1
Coss
Crss
10
100 VDS(V)
Figure 10. Normalized gate threshold voltage
vs. temperature
VGS(th)
(norm)
ID=250 µA
AM15828v1
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 TJ(°C)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
2.3
2.1
1.9
ID=6.5 A
VGS=10V
AM15829v1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized V(BR)DSS vs temperature
VSD (V)
1.4
1.2
1
TJ=-50°C
AM15842v1
V(BR)DSS
(norm)
1.11
1.09
1.07
1.05
ID=1mA
AM15831v1
0.8
1.03
0.6
TJ=25°C
TJ=150°C
0.4
0.2
0
0 2 4 6 8 10 12 ISD(A)
1.01
0.99
0.97
0.95
0.93
-50 -25 0 25 50 75 100 125 TJ(°C)
DocID024735 Rev 2
7/21
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