STP18N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP18N60M2
STMicroelectronics
STP18N60M2 Datasheet PDF : 21 Pages
| |||
STB18N60M2, STP18N60M2, STW18N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
-
(1)
ISDM Source-drain current (pulsed)
-
(2)
VSD Forward on voltage
ISD = 13 A, VGS = 0
-
13 A
52 A
1.6 V
trr Reverse recovery time
- 305
ns
ISD = 13 A, di/dt = 100 A/μs
Qrr Reverse recovery charge
VDD = 60 V (see Figure 17)
-
3.3
μC
IRRM Reverse recovery current
- 22
A
trr Reverse recovery time
- 417
ISD = 13 A, di/dt = 100 A/μs
ns
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C
- 4.6
μC
IRRM Reverse recovery current
(see Figure 17)
- 22
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID024735 Rev 2
5/21
21
Share Link: 