P30-65nm SBC
15.5
Program and Erase Characteristics
Table 27: Program and Erase Specifications
Num
Symbol
Parameter
Min
VPPL
Typ Max
Min
VPPH
Typ Max
Unit Notes
Conventional Word Programming
W200
tPROG/W
Program
Time
Single word
-
40 175
-
40
175
µs
1
Buffered Programming
Aligned 16-Wd, BP time
(32 Byte)
-
70 200
-
70 200
W250
tPROG/Buffer
Program
Time
Aligned 32-Wd, BP time
(64 Byte)
-
85 200
-
85 200 µs
1
one full buffer (256
Words)
-
284 1280 -
160 800
Buffered Enhanced Factory Programming
W451
W452
tBEFP/B
tBEFP/Setup
Program
Single byte
BEFP Setup
n/a n/a n/a
-
0.31
-
n/a n/a n/a 10
-
-
Erase and Suspend
1,2
µs
1
128-KByte Array Block
-
0.5
4
0.5
4
W501
tERS/B
Erase Time 32-KByte Parameter
Block
s
-
0.4 2.5
-
0.4 2.5
1
W600
W601
W602
tSUSP/P
tSUSP/E
tERS/SUSP
Suspend
Latency
Program suspend
Erase suspend
Erase to Suspend
-
20
25
-
20
25
-
500
-
-
20
25
-
20
25
µs
-
500
-
1,3
Blank Check
W702
tBC/AB
blank
check
Array Block
-
3.2
-
-
3.2
-
ms
Notes:
1.
Typical values measured at TC = +25°C and nominal voltages. Performance numbers are valid for all speed versions.
Excludes system overhead. Sampled, but not 100% tested.
2.
Averaged over entire device.
3.
W602 is the typical time between an initial block erase or erase resume command and the a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.
Datasheet
58
Apr 2010
Order Number: 208033-02