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STM8S007C8T6TR(2015) View Datasheet(PDF) - STMicroelectronics

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STM8S007C8T6TR Datasheet PDF : 92 Pages
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Electrical characteristics
STM8S007C8
9.3.4
Internal clock sources and timing characteristics
Subject to general operating conditions for VDD and TA. fHSE
High speed internal RC oscillator (HSI)
Table 31. HSI oscillator characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSI Frequency
-
ACCHSI
Accuracy of HSI oscillator
Accuracy of HSI oscillator
(factory calibrated)
Trimmed by the
CLK_HSITRIMR register
for given VDD and TA
conditions
VDD = 5 V, TA = 25 °C
VDD  5 V, 
-40 °C TA  85 °C
tsu(HSI)
HSI oscillator wakeup
time including calibration
-
IDD(HSI)
HSI oscillator power
consumption
-
-
16
-
MHz
-1.0(1)
-
1.0
%
-
5
-
-5
-
5
-
-
1.0(1)
µs
-
170 250(2) µA
1. Guaranteed by design, not tested in production.
2. Data based on characterization results, not tested in production
Figure 14. Typical HSI frequency variation vs VDD at 3 temperatures
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9''>9@
DLF
58/92
DocID022171 Rev 5

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