STM8S007C8T6TR(2015) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S007C8T6TR
(Rev.:2015)

Value line, 24 MHz STM8S 8-bit MCU, 64 Kbytes Flash, true data EEPROM, 10-bit ADC, timers, 2 UARTs, SPI, I²C

STMicroelectronics 

Electrical characteristics

STM8S007C8

9.3.5

Memory characteristics

RAM and hardware registers

Table 33. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Unit

VRM

Data retention mode(1)

Halt mode (or reset)

VIT-max(2)

V

1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware

registers (only in halt mode). Guaranteed by design, not tested in production.

2. Refer to Table 17 on page 47 for the value of VIT-max.

Flash program memory/data EEPROM memory

General conditions: TA = -40 to 85 °C.

Symbol

Table 34. Flash program memory/data EEPROM memory

Parameter

Conditions

Min(1) Typ Max Unit

VDD

Operating voltage 

(all modes, execution/write/erase)

fCPU  16 MHz 2.95 -

5.5

V

Standard programming time (including

erase) for byte/word/block 

-

tprog (1 byte/4 bytes/128 bytes)

Fast programming time for 1 block

(128 bytes)

-

- 6.0 6.6 ms

- 3.0 3.3 ms

terase

NRW

Erase time for 1 block (128 bytes)

Erase/write cycles(2) 

(program memory)

Erase/write cycles(2)

(data memory)

-

TA 85 °C

- 3.0 3.3 ms

100 -

100 k -

-

cycles

-

Data retention (program memory)

after 100 erase/write cycles at 

TA 85 °C

tRET Data retention (data memory) after 

10 k erase/write cycles at TA 85 °C

Data retention (data memory) after 

100 k erase/write cycles at TA 85 °C

IDD

Supply current (Flash programming or

erasing for 1 to 128 bytes)

TRET = 55° C

TRET = 85° C

-

20 -

-

20 -

-

years

1.0 -

-

- 2.0 -

mA

1. Data based on characterization results, not tested in production.

2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a

write/erase operation addresses a single byte.

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DocID022171 Rev 5

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