STP28N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP28N60M2
STMicroelectronics
STP28N60M2 Datasheet PDF : 21 Pages
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STB28N60M2, STP28N60M2,
STW28N60M2
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2
Power MOSFETs in D2PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-247
Features
Order code
STB28N60M2
STP28N60M2
STW28N60M2
VDS @
TJmax
RDS(on)
max
ID
650 V 0.150 Ω 22 A
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
• LCC converters, resonant converters
AM15572v1
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
Order code
STB28N60M2
STP28N60M2
STW28N60M2
Table 1. Device summary
Marking
Package
D2PAK
28N60M2
TO-220
TO-247
Packaging
Tape and reel
Tube
February 2015
This is information on a product in full production.
DocID025254 Rev 3
1/21
www.st.com
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