STB28N60M2, STP28N60M2, STW28N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
12 VDS
VDD=480V
ID=22A
AM17991v1
VDS
(V)
500
10
400
8
300
6
200
4
2
100
0
0
0
10
20 30
40 Qg(nC)
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
0.142
VGS=10V
AM17992v1
0.140
0.138
0.136
0.134
0.132
0.130
04
8 12 16 20 ID(A)
Figure 10. Capacitance variations
C
(pF)
AM17993v1
Figure 11. Output capacitance stored energy
Eoss
(µJ)
AM17994v1
10000
10
1000
100
10
1
0.1
1
Ciss
Coss
Crss
10
100 VDS(V)
8
6
4
2
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.1
ID=250µA
AM17995v1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 TJ(°C)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.3
2.1
1.9
1.7
1.5
ID=11A
AM17996v1
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
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