STP28N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB28N60M2, STP28N60M2, STW28N60M2

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VGS

ID

ID

IDM (1)

PTOT

dv/dt (2)

dv/dt(3)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Tstg

Storage temperature

Tj

Operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤ 22 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V.

3. VDS ≤ 480 V

Value

± 25

22

14

88

170

15

50

- 55 to 150

Unit

V

A

A

A

W

V/ns

V/ns

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-pcb

Thermal resistance junction-case max

Thermal resistance junction-pcb max(1)

Rthj-amb Thermal resistance junction-ambient max

1. When mounted on 1 inch² FR-4, 2 Oz copper board

Value

Unit

D2PAK TO-220 TO-247

0.74

°C/W

30

°C/W

62.5

50 °C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

3.6

A

EAS

Single pulse avalanche energy (starting Tj=25°C,

ID= IAR; VDD=50 V)

350

mJ

DocID025254 Rev 3

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