STP28N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP28N60M2
STMicroelectronics
STP28N60M2 Datasheet PDF : 21 Pages
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STB28N60M2, STP28N60M2, STW28N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
-
ISDM (1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 22 A, VGS = 0
-
22 A
88 A
1.6 V
trr
Reverse recovery time
- 350
ns
Qrr Reverse recovery charge
ISD = 22 A, di/dt = 100 A/µs
-
VDD = 60 V (see Figure 21)
4.7
µC
IRRM Reverse recovery current
-
27
A
trr
Reverse recovery time
ISD = 22 A, di/dt = 100 A/µs
-
451
ns
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
- 6.5
µC
IRRM Reverse recovery current
(see Figure 21)
-
29
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID025254 Rev 3
5/21
21
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