STP16N50M2(2018) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP16N50M2
(Rev.:2018)

N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages

STMicroelectronics 

STD16N50M2, STF16N50M2, STP16N50M2

Electrical ratings

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

DPAK

VGS

Gate-source voltage

ID

Drain current (continuous) at TC = 25 °C

ID

Drain current (continuous) at TC= 100 °C

IDM (1)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

dv/dt (2)

Peak diode recovery voltage slope

dv/dt (3)

MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink (t = 1 s,

TC = 25 °C)

Tstg

Storage temperature range

Tj

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS

3. VDS ≤ 400 V

Value

TO-220

±25

13

8

52

110

15

50

-55 to 150

TO-220FP

25

2500

Unit

V

A

A

A

W

V/ns

V/ns

V

°C

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Thermal resistance junction-case

Rthj-amb

Thermal resistance junction-ambient

Rthj-pcb (1)

Thermal resistance junction-pcb

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Value

DPAK

TO-220

TO-220FP

1.14

5

62.5

50

Unit

°C/W

Symbol

IAR

EAS

Table 3. Avalanche characteristics

Parameter

Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Value Unit

4

A

215 mJ

DS10450 - Rev 6

page 2/24

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