STP16N50M2(2018) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP16N50M2
(Rev.:2018)
(Rev.:2018)
STMicroelectronics
STP16N50M2 Datasheet PDF : 24 Pages
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STD16N50M2, STF16N50M2, STP16N50M2
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = 500 V
VGS = 0 V, VDS = 500 V,
TC = 125 °C
VDS = 0 V, VGS(1) = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.5 A
1. Defined by design, not subject to production test
Min.
Typ.
Max.
Unit
500
V
1
µA
100
µA
±10
µA
2
3
4
V
0.24
0.28
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS= 100 V, f = 1 MHz,
VGS = 0 V
-
710
-
pF
-
44
-
pF
-
1.35
-
pF
Coss eq. (1)
Equivalent output capacitance VDS = 0 V to 400 V, VGS = 0 V
-
192
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID= 0 A
-
5.2
-
Ω
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 400 V, ID = 13 A,
-
19.5
-
nC
VGS = 0 to 10 V (see
Figure 18. Test circuit for gate
-
4
-
nC
charge behavior)
-
8
-
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6. Switching times
Test conditions
Min.
Typ.
Max.
Unit
VDD = 250 V, ID = 6.5 A
-
9.6
-
ns
RG = 4.7 Ω, VGS = 10 V (see
Figure 17. Test circuit for
-
7.6
-
ns
resistive load switching times
-
32
-
ns
and Figure 22. Switching time
waveform)
-
10
-
ns
DS10450 - Rev 6
page 3/24
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