STP16N50M2(2018) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP16N50M2
(Rev.:2018)

N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages

STMicroelectronics 

STD16N50M2, STF16N50M2, STP16N50M2

Electrical characteristics

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VGS = 0 V, ISD = 13 A

ISD = 13 A, di/dt = 100 A/µs,

VDD = 60 V (see

Figure 19. Test circuit for

inductive load switching and

diode recovery times )

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 13 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 19. Test circuit for

inductive load switching and

diode recovery times )

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Min.

-

-

-

-

-

-

-

-

-

Typ.

280

2.85

20.5

388

4.5

21

Max.

13

52

1.6

Unit

A

A

V

ns

µC

A

ns

µC

A

DS10450 - Rev 6

page 4/24

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