STP16N50M2(2018) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP16N50M2
(Rev.:2018)

N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages

STMicroelectronics 

STD16N50M2, STF16N50M2, STP16N50M2

Electrical characteristics (curves)

Figure 11. Normalized gate threshold voltage vs.

temperature

VGS(th)

(norm)

1.1

GIPG2606141354LM

ID=250 µA

1.0

0.9

0.8

0.7

0.6

-75

-25

25

75 125 TJ(°C)

Figure 13. Static drain-source on-resistance

RDS(on)

(Ω)

VGS=10V

GIPG2606141319LM

0.250

0.240

0.230

0 2 4 6 8 10 12 ID(A)

Figure 15. Output capacitance stored energy

Eoss

(µJ)

GIPG26067141339LM

4

3

2

1

0

0 100 200 300 400 500 VDS(V)

Figure 12. Normalized V(BR)DSS vs. temperature

V(BR)DSS

(norm)

1.08

GIPG2606141424LM

ID=1 mA

1.04

1.00

0.96

0.92

0.88

-75 -25

25

75 125 TJ(°C)

Figure 14. Normalized on-resistance vs. temperature

RDS(on)

(norm)

2.2

VGS=10V

GIPG2606141410LM

1.8

1.4

1

0.6

0.2

-75 -25

25

75 125 TJ(°C)

Figure 16. Source- drain diode forward characteristics

VSD(V)

GIPG2606141300LM

1.2

1

TJ=-50°C

0.9

0.8

TJ=25°C

0.7

0.6

TJ=150°C

0.5

0 2 4 6 8 10 12 ISD(A)

DS10450 - Rev 6

page 7/24

Share Link: