ST7PLITEU09M3TR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

ST7PLITEU09M3TR

8-bit MCU with single voltage Flash memory, ADC, timers

STMicroelectronics 

ST7LITEU05 ST7LITEU09

13.6 MEMORY CHARACTERISTICS

TA = -40°C to 125°C, unless otherwise specified

13.6.1 RAM and Hardware Registers

Symbol

Parameter

VRM

Data retention mode 1)

Conditions

Min

Typ

Max

HALT mode (or RESET)

1.6

13.6.2 FLASH Program Memory

Symbol

Parameter

Conditions

Min

VDD

tprog

tRET

NRW

IDD

Operating voltage for Flash write/erase

2.4

Programming time for 1~32 bytes 2)

TA=−40 to +125 °C

Programming time for 2 KBytes

TA=+25 °C

Data retention 4)

TA=+55 °C 3)

20

Write erase cycles

TA=+25 °C

Read / Write / Erase

modes

Supply current 6)

fCPU = 8 MHz, VDD = 5.5 V

No Read/No Write Mode

Power down mode / HALT

Typ Max

5.5

5

10

0.32 0.64

10k

2.6

100

0

0.1

Unit

V

Unit

V

ms

s

years

cycles

mA

µA

µA

13.6.3 EEPROM Data Memory

Symbol

VDD

tprog

tret

NRW

Parameter

Conditions

Operating voltage for EEPROM

write/erase

Programming time for 1~32

bytes

Data retention 4)

Write erase cycles

Refer to operating range of VDD with

TA, section 13.3.1 on page 76

TA=−40 to +125 °C

TA=+55 °C 3)

TA=+25 °C

Min Typ Max Unit

2.4

5.5 V

5

10 ms

20

years

300k cycles

Notes:

1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-

isters (only in HALT mode). Guaranteed by construction, not tested in production.

2. Up to 32 bytes can be programmed at a time.

3. The data retention time increases when TA decreases.

4. Data based on reliability test results and monitored in production.

5. Data based on characterization results, not tested in production.

6. Guaranteed by Design. Not tested in production.

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