ST7PLITEU09M3TR View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
ST7PLITEU09M3TR Datasheet PDF : 115 Pages
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ST7LITEU05 ST7LITEU09
EMC CHARACTERISTICS (Cont’d)
13.7.2 Electro Magnetic Interference (EMI)
Based on a simple application running on the
product (toggling 2 LEDs through the I/O ports),
the product is monitored in terms of emission. This
emission test is in line with the norm SAE J 1752/
3 which specifies the board and the loading of
each pin.
Symbol
Parameter
SEMI Peak level
Conditions
Monitored
Frequency Band
VDD=5 V, TA=+25 °C,
SO8 package,
0.1 MHz to 30 MHz
30 MHz to 130 MHz
conforming to SAE J 1752/3 130 MHz to 1 GHz
SAE EMI Level
Max vs. [fOSC/fCPU]
-/8MHz
20
20
13
2.5
Unit
dBµV
-
Note:
1. Data based on characterization results, not tested in production.
13.7.3 Absolute Maximum Ratings (Electrical
Sensitivity)
Based on three different tests (ESD, LU and DLU)
using specific measurement methods, the product
is stressed in order to determine its performance in
terms of electrical sensitivity. For more details, re-
fer to the application note AN1181.
13.7.3.1 Electro-Static Discharge (ESD)
Electro-Static Discharges (a positive then a nega-
tive pulse separated by 1 second) are applied to
the pins of each sample according to each pin
combination. The sample size depends on the
number of supply pins in the device (3 parts*(n+1)
supply pin). One model can be simulated: Human
Body Model. This test conforms to the JESD22-
A114A/A115A standard.
Absolute Maximum Ratings
Symbol
VESD(HBM)
VESD(CDM)
Ratings
Electro-static discharge voltage
(Human Body Model)
Electro-static discharge voltage
(Charge Device Model)
Conditions
TA=+25 °C
Maximum value 1) Unit
4000
V
500
V
Note:
1. Data based on characterization results, not tested in production.
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