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STM8S005K6T6CTR View Datasheet(PDF) - STMicroelectronics

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Description
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STM8S005K6T6CTR Datasheet PDF : 103 Pages
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Electrical characteristics
STM8S005K6 STM8S005C6
(2) The oscillator selection can be optimized in terms of supply current using a high quality resonator with
small Rm value. Refer to crystal manufacturer for more details
(3) Data based on characterization results, not tested in production.
(4) tSU(HSE) is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
Figure 18: HSE oscillator circuit diagram
Rm
Lm CO
Cm
Resonator
CL1
OSCIN
Resonator
CL2
OSCOUT
f HSE to core
RF
gm
Consumption
control
STM8
9.3.4
HSE oscillator critical g m equation
gmcrit= (2 × Π × fHSE)2 × Rm(2Co + C)2
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1= CL2 = C: Grounded external capacitance
gm >> gmcrit
Internal clock sources and timing characteristics
Subject to general operating conditions for VDD and TA.
High speed internal RC oscillator (HSI)
Table 32: HSI oscillator characteristics
Symbol Parameter
Conditions
Min
Typ Max Unit
fHSI
Frequency
16
MHz
68/103
DocID022186 Rev 3

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